Discrete Semiconductor Products

GC10MPS12-220

Obsolete

GeneSiC Semiconductor

SIC SCHOTTKY DIODES 1200V 10A TO-220-2 SIC SCHOTTKY MPS

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Discrete Semiconductor Products

GC10MPS12-220

Obsolete

GeneSiC Semiconductor

SIC SCHOTTKY DIODES 1200V 10A TO-220-2 SIC SCHOTTKY MPS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GC10MPS12-220

Capacitance @ Vr, F	660 pF
Current - Average Rectified (Io)	54 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

SiC Schottky MPS Series

Part	Speed	Technology	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Package / Case	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Diode Type	Voltage - Peak Reverse (Max) [Max]	Current - Max [Max]
GeneSiC Semiconductor GD2X100MPS12N	500 mA	SiC (Silicon Carbide) Schottky	2 Independent	1.8 V	0 ns	175 ░C	-55 °C	1.2 kV	SOT-227	Chassis Mount	SOT-227-4 miniBLOC	136 A	25 µA
GeneSiC Semiconductor GE08MPS06Q-TR
GeneSiC Semiconductor GD30MPS12J	500 mA	SiC (Silicon Carbide) Schottky			0 ns	175 ░C	-55 °C	1.2 kV	TO-263-7	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		20 µA	1.8 V	59 A	1101 pF
GeneSiC Semiconductor GD10MPS12E	500 mA	SiC (Silicon Carbide) Schottky		1.8 V	0 ns	175 ░C	-55 °C	1.2 kV	TO-252-2	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		5 µA		29 A	367 pF
GeneSiC Semiconductor GC10MPS12-220	500 mA	SiC (Silicon Carbide) Schottky		1.8 V	0 ns	175 ░C	-55 °C	1.2 kV	TO-220-2	Through Hole	TO-220-2		10 µA		54 A	660 pF
GeneSiC Semiconductor GE2X12MPS06D									TO-247-3		TO-247-3						Schottky - 1 Pair Common Cathode	650 V	24 A
GeneSiC Semiconductor GD10MPS17H	500 mA	SiC (Silicon Carbide) Schottky		1.8 V	0 ns	175 ░C	-55 °C	1700 V	TO-247-2	Through Hole	TO-247-2		20 µA		26 A	721 pF
GeneSiC Semiconductor GD2X75MPS17N	500 mA	SiC (Silicon Carbide) Schottky	2 Independent			175 ░C	-55 °C	1700 V	SOT-227	Chassis Mount	SOT-227-4 miniBLOC	115 A