Discrete Semiconductor Products
SCT2080KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 40 A, 1.2 KV, 0.08 OHM, TO-247N
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Discrete Semiconductor Products
SCT2080KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 40 A, 1.2 KV, 0.08 OHM, TO-247N
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2080KEHRC11 |
|---|---|
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 106 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2080 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 117 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT2080KEHR Series
AEC-Q101 qualified automotive grade product. SCT2080KEHR is an SiC (Silicon Carbide) MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources