Discrete Semiconductor Products

SI7446BDP-T1-E3

Obsolete

MOSFET N-CH 30V 12A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7446BDP-T1-E3

Current - Continuous Drain (Id) @ 25¯C	12 A
Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	3076 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8, PowerPAKÛ SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs [Max]	7.5 mOhm
Supplier Device Package	PowerPAK® SO-8, PowerPAKÛ SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs (Max) [Max]	-20 V
Vgs(th) (Max) @ Id	3 V, 3 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25¯C	Technology	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI7446BDP-T1-E3	PowerPAK® SO-8 PowerPAKÛ SO-8	12 A	12 A	MOSFET (Metal Oxide)	-20 V	3 V 3 V	7.5 mOhm	4.5 V 10 V	20 V	3076 pF	Surface Mount	30 V	-55 °C	150 °C	1.9 W	PowerPAK® SO-8 PowerPAKÛ SO-8	33 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 12A (Ta) 1.9W (Ta) Surface Mount PowerPAKÛ SO-8

Technical documentation and resources

No documents available