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SIR401DP-T1-GE3
Discrete Semiconductor Products

SIR416DP-T1-GE3

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Vishay General Semiconductor - Diodes Division

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0038OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

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SIR401DP-T1-GE3
Discrete Semiconductor Products

SIR416DP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0038OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR416DP-T1-GE3
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]90 nC
Input Capacitance (Ciss) (Max) @ Vds3350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)5.2 W, 69 W
Rds On (Max) @ Id, Vgs3.8 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.60
10$ 1.12
100$ 0.81
500$ 0.64
1000$ 0.60
Digi-Reel® 1$ 1.60
10$ 1.12
100$ 0.81
500$ 0.64
1000$ 0.60
Tape & Reel (TR) 3000$ 0.52
6000$ 0.50

Description

General part information

SIR416 Series

N-Channel 40 V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources