
ADRF5132BCPZN
ActiveRF SWITCH, SILICON, SPDT, 700 MHZ TO 5 GHZ, 4.5 V TO 5.4 V SUPPLY, -40 TO 105 °C, LFCSP-EP-16
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ADRF5132BCPZN
ActiveRF SWITCH, SILICON, SPDT, 700 MHZ TO 5 GHZ, 4.5 V TO 5.4 V SUPPLY, -40 TO 105 °C, LFCSP-EP-16
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Technical Specifications
Parameters and characteristics for this part
| Specification | ADRF5132BCPZN |
|---|---|
| Circuit | SPDT |
| Frequency Range (Max) | 5 GHz |
| Frequency Range (Min) | 700 MHz |
| IIP3 | 62 dBm |
| Impedance | 50 Ohm |
| Insertion Loss | 0.9 dB |
| Isolation | 35 dB |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 105 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 16-WFQFN Exposed Pad, CSP |
| Package Length | 3 mm |
| Package Name | 16-LFCSP-WQ |
| Package Width | 3 mm |
| RF Type | General Purpose |
| Test Frequency | 5 GHz |
| Topology | Reflective |
| Voltage - Supply (Maximum) | 5.4 V |
| Voltage - Supply (Minimum) | 4.5 V |
Pricing
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Description
General part information
ADRF5132 Series
The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.ApplicationsCellular/4G infrastructureWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement
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