Discrete Semiconductor Products

IKD10N60RATMA1

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600 V, 10 A RC DRIVES IGBT WITH ANTI-PARALLEL DIODE IN TO-252 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 2 KHZ TO 20 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE HOME APPLIANCES, FRIDGE COMPRESSORS, PUMPS AND DRIVES, FANS, INDUSTRIAL DRIVES AND AIRCON SYSTEMS.

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DocumentsInfineon-MA005620490-MaterialContentSheet-v01_00-EN Introduction to Infineon’s simulation models for IGBTs and silicon diodes in discrete packages +1

Discrete Semiconductor Products

IKD10N60RATMA1

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INFINEON

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DocumentsInfineon-MA005620490-MaterialContentSheet-v01_00-EN Introduction to Infineon’s simulation models for IGBTs and silicon diodes in discrete packages +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKD10N60RATMA1

Current - Collector (Ic) (Max) [Max]	20 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	64 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	150 W
Supplier Device Package	PG-TO252-3
Switching Energy	380 µJ, 210 µJ
Td (on/off) @ 25°C	192 ns, 14 ns
Test Condition	10 A, 15 V, 400 V, 23 Ohm
Vce(on) (Max) @ Vge, Ic [Max]	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IKD10N Series

Part	Gate Charge	Vce(on) (Max) @ Vge, Ic	IGBT Type	Current - Collector (Ic) (Max) [Max]	Test Condition	Package / Case	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C	Switching Energy	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
INFINEON IKD10N60RFATMA1	64 nC	2.5 V	Trench Field Stop	20 A	10 A 15 V 26 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	72 ns	30 A	PG-TO252-3	175 °C	-40 °C	12 ns 168 ns	160 µJ 190 µJ	150 W	Surface Mount	600 V
INFINEON IKD10N60RAATMA2	64 nC		Trench	20 A	10 A 15 V 23 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	62 ns	30 A	PG-TO252-3	175 °C	-40 °C	14 ns 192 ns		150 W	Surface Mount	600 V	2.1 V
INFINEON IKD10N60RATMA1	64 nC		Trench Field Stop	20 A	10 A 15 V 23 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		30 A	PG-TO252-3	175 °C	-40 °C	14 ns 192 ns	210 µJ 380 µJ	150 W	Surface Mount	600 V	2.1 V
INFINEON IKD10N60RC2ATMA1	48 nC	2.3 V	Trench Field Stop	18.8 A	10 A 15 V 49 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	104 ns	30 A	PG-TO252-3	175 °C	-40 °C		170 µJ 320 µJ	79 W	Surface Mount	600 V		14 ns	250 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.83
		10	$ 1.17
		100	$ 0.78
		500	$ 0.62
		1000	$ 0.57
	Digi-Reel®	1	$ 1.83
		10	$ 1.17
		100	$ 0.78
		500	$ 0.62
		1000	$ 0.57
	N/A	1060	$ 1.55
	Tape & Reel (TR)	2500	$ 0.51
		5000	$ 0.48
		7500	$ 0.47

Description

General part information

IKD10N Series

TheRC-Drives 600 V, 10 A hard-switching TRENCHSTOP™ IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for sensitive consumer drives market.

Documents

Technical documentation and resources

Infineon-MA005620490-MaterialContentSheet-v01_00-EN

Material Content SheetInfo

Introduction to Infineon’s simulation models for IGBTs and silicon diodes in discrete packages

Application Notes

IKD10N60R

Data Sheets