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SI7872DP-T1-GE3
Discrete Semiconductor Products

SI7872DP-T1-GE3

Obsolete
Vishay Dale

MOSFET 2N-CH 30V 6.4A PPAK SO8

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SI7872DP-T1-GE3
Discrete Semiconductor Products

SI7872DP-T1-GE3

Obsolete
Vishay Dale

MOSFET 2N-CH 30V 6.4A PPAK SO8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7872DP-T1-GE3
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id)6.4 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)11 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8 Dual
Package NamePowerPAK® SO-8 Dual
Power - Max1.4 W
Rds On (Max)22 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)3 V

Pricing

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DistributorPackageQuantity$Updated

CAD

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Description

General part information

SI7872 Series

Mosfet Array 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual

Documents

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