Discrete Semiconductor Products

SI7872DP-T1-GE3

Obsolete

MOSFET 2N-CH 30V 6.4A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 6.4A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7872DP-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	FET Feature	Package / Case	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Vishay General Semiconductor - Diodes Division SI7872DP-T1-GE3	11 nC	22 mOhm	3 V	Logic Level Gate	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	1.4 W	30 V	PowerPAK® SO-8 Dual	-55 °C	150 °C	2 N-Channel (Half Bridge)	6.4 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Digi-Reel®	1	$ 2.06

General part information

Mosfet Array 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources