Discrete Semiconductor Products

BF822,215

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TRANS NPN 250V 0.05A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN 250V 0.05A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BF822,215

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	250 V

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Mounting Type	Supplier Device Package	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Freescale Semiconductor - NXP BF822,215	SC-59 SOT-23-3 TO-236-3	50 hFE	50 mA	250 V	60 MHz	Surface Mount	TO-236AB	150 °C	0.01 µA	NPN	600 mV	250 mW

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General part information

Bipolar (BJT) Transistor NPN 250 V 50 mA 60MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources