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WNSXXXXXXXXWQ
Discrete Semiconductor Products

BYC30MW-650PT2Q

Active
WeEn Semiconductors

BYC30MW-650PT2/TO247-2L/STANDARD

WNSXXXXXXXXWQ
Discrete Semiconductor Products

BYC30MW-650PT2Q

Active
WeEn Semiconductors

BYC30MW-650PT2/TO247-2L/STANDARD

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30MW-650PT2Q
Current - Average Rectified (Io)30 A
Current - Reverse Leakage30 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)38 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)2.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 600$ 0.88<4d
TMEN/A 1$ 1.55<1d
5$ 1.39
10$ 1.30
30$ 1.16
300$ 0.91

CAD

3D models and CAD resources for this part

Description

General part information

BYC30MW-650PT2Q

Diode 650 V 30A Through Hole TO-247-2

Documents

Technical documentation and resources