Discrete Semiconductor Products

BY203-20STAP

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DIODE AVALANCHE 2KV 250MA SOD57

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Discrete Semiconductor Products

Active

DIODE AVALANCHE 2KV 250MA SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BY203-20STAP

Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	300 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V
Voltage - Forward (Vf) (Max) @ If	2.4 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division BY203-12STAP	SOD-57	300 ns	150 °C	-55 °C	250 mA	Through Hole	Axial SOD-57	1.2 kV	200 mA 500 ns	2 µA	Avalanche	2.4 V
Vishay General Semiconductor - Diodes Division BY203-12STR	SOD-57	300 ns	150 °C	-55 °C	250 mA	Through Hole	Axial SOD-57	1.2 kV	200 mA 500 ns	2 µA	Avalanche	2.4 V
Vishay General Semiconductor - Diodes Division BY203-16STAP	SOD-57	300 ns	150 °C	-55 °C	250 mA	Through Hole	Axial SOD-57		200 mA 500 ns	2 µA	Avalanche	2.4 V
Vishay General Semiconductor - Diodes Division BY203-20STAP	SOD-57	300 ns	150 °C	-55 °C	250 mA	Through Hole	Axial SOD-57	2000 V	200 mA 500 ns	2 µA	Avalanche	2.4 V

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General part information

Diode 2000 V 250mA Through Hole SOD-57

Technical documentation and resources