Discrete Semiconductor Products

IPS65R650CEAKMA1

Obsolete

TRANS MOSFET N-CH 650V 10.1A 3-PIN(3+TAB) TO-251 TUBE

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 650V 10.1A 3-PIN(3+TAB) TO-251 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R650CEAKMA1

Current - Continuous Drain (Id) @ 25°C	10.1 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Technology	Supplier Device Package
INFINEON IPS65R650CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	700 V	10 V	440 pF	86 W	-40 °C	150 °C	20 V	10.1 A	23 nC	650 mOhm	Through Hole	N-Channel	MOSFET (Metal Oxide)	PG-TO251-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 700 V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3

Technical documentation and resources