Discrete Semiconductor Products

SIHG085N60EF-GE3

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EF SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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EF SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG085N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2733 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG085N60EF-GE3	MOSFET (Metal Oxide)	63 nC	Through Hole	-55 °C	150 °C	30 V	2733 pF	5 V	84 mOhm	600 V	N-Channel	TO-247AC	TO-247-3	34 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 34A (Tc) 184W (Tc) Through Hole TO-247AC

Technical documentation and resources