Discrete Semiconductor Products

UPA1740TP-E1-AZ

Obsolete

UPA1740TP-E1-AZ - MOS FIELD EFFE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

UPA1740TP-E1-AZ - MOS FIELD EFFE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1740TP-E1-AZ

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Power Dissipation (Max)	22 W, 1 W
Rds On (Max) @ Id, Vgs	440 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

N Channel Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Package / Case
Renesas Electronics Corporation UPA1740TP-E1-AZ	440 mOhm	10 V	150 °C	30 V	MOSFET (Metal Oxide)	8-HSOP	420 pF	7 A	1 W 22 W	12 nC	4.5 V	200 V	Surface Mount	N-Channel	8-PowerSOIC (0.173" 4.40mm Width)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	282500	$ 1.96

General part information

The UPA1740TP is a N Channel Power MOSFET.

Technical documentation and resources