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BSS123,215
Discrete Semiconductor Products

BSS123,215

NRND
Nexperia USA Inc.

TRANS MOSFET N-CH 100V 0.15A 3-PIN SOT-23 T/R

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BSS123,215
Discrete Semiconductor Products

BSS123,215

NRND
Nexperia USA Inc.

TRANS MOSFET N-CH 100V 0.15A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS123,215
Current - Continuous Drain (Id) @ 25°C150 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]40 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]250 mW
Rds On (Max) @ Id, Vgs [Max]6 Ohm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.29

Description

General part information

BSS123 Series

100 V, N-channel Trench MOSFET