Discrete Semiconductor Products

SI7344DP-T1-E3

Obsolete

MOSFET N-CH 20V 11A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 11A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7344DP-T1-E3

Current - Continuous Drain (Id) (Ta)	11 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.8 W
Rds On (Max)	8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

Part	Package Name	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs(th) (Max)	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)
Vishay Dale SI7344DP-T1-E3	PowerPAK® SO-8	MOSFET (Metal Oxide)	10 V	4.5 V	Surface Mount	-55 °C	150 °C	15 nC	11 A	PowerPAK® SO-8	2.1 V	8 mOhm	N-Channel	20 V	1.8 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.73	30d+

3D models and CAD resources for this part

General part information

N-Channel 20 V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources