Discrete Semiconductor Products

SH8K5TB1

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MOSFET 2N-CH 30V 3.5A 8SOP

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 3.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K5TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3.5 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	83 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Package / Case	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Power - Max [Max]	Configuration
Rohm Semiconductor SH8K5TB1	30 V	3.5 nC	Surface Mount	0.154 in	8-SOIC	3.9 mm	150 °C	3.5 A	83 mOhm	140 pF	Logic Level Gate	2.5 V	MOSFET (Metal Oxide)	8-SOP	2 W	2 N-Channel (Dual)

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General part information

Mosfet Array 30V 3.5A 2W Surface Mount 8-SOP

Technical documentation and resources