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TL431BFDT-QR
Discrete Semiconductor Products

BCV47-QR

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Nexperia USA Inc.

TRANS NPN DARL 60V 0.5A TO-236AB

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TL431BFDT-QR
Discrete Semiconductor Products

BCV47-QR

Active
Nexperia USA Inc.

TRANS NPN DARL 60V 0.5A TO-236AB

Technical Specifications

Parameters and characteristics for this part

SpecificationBCV47-QR
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]10000
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.08
Tape & Reel (TR) 15000$ 0.07

Description

General part information

BCV47-Q Series

NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.