Discrete Semiconductor Products

BCW68FVL

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BCW68FSOT23TO-236AB

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Discrete Semiconductor Products

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BCW68FSOT23TO-236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BCW68FVL

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	450 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Grade	Qualification	Mounting Type	Package / Case
Freescale Semiconductor - NXP BCW68FR	5 µA	100 hFE	250 mW	TO-236AB	150 °C	450 mV	PNP	45 V	800 mA	Automotive	AEC-Q101	Surface Mount	SC-59 SOT-23-3 TO-236-3
Freescale Semiconductor - NXP BCW68FVL	5 µA	100 hFE	250 mW	TO-236AB	150 °C	450 mV	PNP	45 V	800 mA	Automotive	AEC-Q101	Surface Mount	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 45 V 800 mA 80MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources