Discrete Semiconductor Products

VS-5EWL06FN-M3

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DIODE GEN PURP 600V 5A DPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-5EWL06FN-M3

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	145 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA (DPAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Technology	Current - Average Rectified (Io)	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-5EWL06FNTR-M3	Standard	5 A	200 mA 500 ns	TO-252AA (DPAK)	600 V	175 ░C	-65 C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1.2 V	145 ns	5 µA
Vishay General Semiconductor - Diodes Division VS-5EWL06FN-M3	Standard	5 A	200 mA 500 ns	TO-252AA (DPAK)	600 V	175 ░C	-65 C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1.2 V	145 ns	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 5A Surface Mount TO-252AA (DPAK)

Technical documentation and resources