Specification	PHB32N06LT,118

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	97 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

PHB32N06LT Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PHB32N06LT,118	4.5 V 5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1280 pF	34 A	97 W	N-Channel	2 V	15 V	175 °C	-55 °C	D2PAK	17 nC	MOSFET (Metal Oxide)	60 V	Surface Mount	37 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.19
		10	$ 0.97
		100	$ 0.76
	Digi-Reel®	1	$ 1.19
		10	$ 0.97
		100	$ 0.76
	N/A	0	$ 2.24
	Tape & Reel (TR)	800	$ 0.64
		1600	$ 0.52
		2400	$ 0.49
		5600	$ 0.47
		20000	$ 0.46

Description

General part information

PHB32N06LT Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.