Discrete Semiconductor Products

SI7415DN-T1-GE3

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MOSFET P-CH 60V 3.6A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET P-CH 60V 3.6A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7415DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7415DN-T1-GE3	3.6 A	P-Channel	Surface Mount	PowerPAK® 1212-8	3 V	4.5 V 10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 W	20 V	60 V	25 nC	65 mOhm	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources