Discrete Semiconductor Products

BAT86S-TR

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DIODE SCHOTTKY 50V 200MA DO35

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Discrete Semiconductor Products

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DIODE SCHOTTKY 50V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAT86S-TR

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	Axial, DO-35, DO-204AH
Qualification	AEC-Q101
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Grade	Operating Temperature - Junction	Qualification	Voltage - Forward (Vf) (Max) @ If	Package / Case	Speed	Speed
Vishay General Semiconductor - Diodes Division BAT86S-TR	50 V	5 µA	Schottky	DO-204AH (DO-35)	200 mA	Through Hole	Automotive	125 °C	AEC-Q101	900 mV	Axial DO-204AH DO-35	Any Speed	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 200mA Through Hole DO-204AH (DO-35)

Technical documentation and resources