Discrete Semiconductor Products

SI7530DP-T1-E3

Obsolete

MOSFET N/P-CH 60V 3A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 60V 3A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7530DP-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A, 3.2 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Power - Max	1.4 W, 1.5 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max	Technology	FET Feature
Vishay General Semiconductor - Diodes Division SI7530DP-T1-E3	60 V	20 nC	3 A 3.2 A	PowerPAK® SO-8 Dual	N and P-Channel	3 V	PowerPAK® SO-8 Dual	Surface Mount	75 mOhm	1.4 W 1.5 W	MOSFET (Metal Oxide)	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3A, 3.2A 1.4W, 1.5W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources

No documents available