Discrete Semiconductor Products

SI7530DP-T1-E3

Obsolete

MOSFET N/P-CH 60V 3A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 60V 3A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7530DP-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.2 A
Current - Continuous Drain (Id) (Typical)	3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual
Power - Max (Value 1)	1.4 W
Power - Max (Value 2)	1.5 W
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

Part	Drain to Source Voltage (Vdss)	Configuration	Mounting Type	Rds On (Max)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	FET Feature	Package / Case	Technology	Power - Max (Value 1)	Power - Max (Value 2)	Gate Charge (Max)	Package Name	Vgs(th) (Max)
Vishay Dale SI7530DP-T1-E3	60 V	N P-Channel	Surface Mount	75 mOhm	3 A	3.2 A	Logic Level Gate	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	1.4 W	1.5 W	20 nC	PowerPAK® SO-8 Dual	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Mosfet Array 60V 3A, 3.2A 1.4W, 1.5W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources

No documents available