Discrete Semiconductor Products

RJH1CF6RDPQ-80#T2

Obsolete

IGBT 1200V 55A 227.2W TO247

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 55A 227.2W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	RJH1CF6RDPQ-80#T2

Current - Collector (Ic) (Max) [Max]	55 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power - Max [Max]	227.2 W
Supplier Device Package	TO-247
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

IGBT for IH

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case
Renesas Electronics Corporation RJH1CF6RDPQ-80#T2	1200 V	Through Hole	227.2 W	TO-247	2.3 V	150 °C	55 A	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT devices for induction heating (IH) (soft switching), recommended for 10 to 100 kHz frequencies, and not guaranteed against short circuit.

Technical documentation and resources