Discrete Semiconductor Products

SIHH150N60E-T1-GE3

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E SERIES POWER MOSFET POWERPAK 8

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Discrete Semiconductor Products

Active

E SERIES POWER MOSFET POWERPAK 8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH150N60E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1514 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	156 W
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHH150N60E-T1-GE3	8-PowerTDFN	30 V	1514 pF	Surface Mount	156 W	MOSFET (Metal Oxide)	5 V	PowerPAK® 8 x 8	36 nC	N-Channel	600 V	10 V	19 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources