Discrete Semiconductor Products

FDA75N28

Obsolete

MOSFET N-CH 280V 75A TO3PN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 280V 75A TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	FDA75N28

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	280 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	144 nC
Input Capacitance (Ciss) (Max) @ Vds	6700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDA75N28	10 V	30 V	-55 °C	150 °C	TO-3PN	6700 pF	Through Hole	280 V	144 nC	41 mOhm	SC-65-3 TO-3P-3	75 A	MOSFET (Metal Oxide)	N-Channel	520 W	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 280 V 75A (Tc) 520W (Tc) Through Hole TO-3PN

Technical documentation and resources