Discrete Semiconductor Products

RJK0330DPB-01#J0

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MOSFET, N-CH, 30V, 45A, LFPAK ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 30V, 45A, LFPAK ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0330DPB-01#J0

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 45A 2.7mohm LFPAK56

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK0330DPB-01#J0	45 A	4300 pF	20 V	55 W	MOSFET (Metal Oxide)	30 V	27 nC	Surface Mount	4.5 V 10 V	N-Channel	150 °C	SC-100 SOT-669	LFPAK	2.7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources