Discrete Semiconductor Products

1N5811/TR

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DIODE GEN PURP 150V 6A AXIAL

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Discrete Semiconductor Products

Active

DIODE GEN PURP 150V 6A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	1N5811/TR

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	B, Axial
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	B, Axial
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	875 mV

Part	Technology	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Speed
Microsemi Corporation 1N5811/TR	Standard	B Axial	B Axial	875 mV	6 A	5 µA	Through Hole	175 ░C	-65 C	30 ns	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 150 V 6A Through Hole B, Axial

Technical documentation and resources