Discrete Semiconductor Products

VS-E4PU3006L-N3

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DIODE GEN PURP 600V 30A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-E4PU3006L-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	65 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-E4PU3006L-N3	Standard	600 V	50 µA	175 ░C	-55 C	TO-247-2	200 mA 500 ns	TO-247AD	65 ns	1.6 V	Through Hole	30 A

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General part information

Diode 600 V 30A Through Hole TO-247AD

Technical documentation and resources