Discrete Semiconductor Products

PMPB08R6ENX

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MOSFET N-CH 30V 11A DFN2020M-6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 11A DFN2020M-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB08R6ENX

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.6 nC
Input Capacitance (Ciss) (Max) @ Vds	840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.9 W, 12.5 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMPB08R6ENX	30 V	20.6 nC	20 V	N-Channel	-55 °C	150 °C	1.9 W 12.5 W	6-UDFN Exposed Pad	10.5 mOhm	840 pF	DFN2020MD-6	Surface Mount	11 A	MOSFET (Metal Oxide)	2 V

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General part information

N-Channel 30 V 11A (Ta) 1.9W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources