Discrete Semiconductor Products

TSM8N80CI C0G

Obsolete

MOSFET N-CH 800V 8A ITO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 8A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	TSM8N80CI C0G

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1921 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	40.3 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	ITO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM8N80CI C0G	N-Channel	-55 °C	150 °C	8 A	10 V	ITO-220AB	30 V	TO-220-3 Full Pack Isolated Tab	Through Hole	41 nC	MOSFET (Metal Oxide)	40.3 W	1.05 Ohm	4 V	1921 pF	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 8A (Tc) 40.3W (Tc) Through Hole ITO-220AB

Technical documentation and resources

No documents available