Discrete Semiconductor Products
RGSX5TS65EGC11
NRNDRohm Semiconductor
8ΜS SHORT-CIRCUIT TOLERANCE, 650V 75A, FRD BUILT-IN, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGSX5TS65EGC11
NRNDRohm Semiconductor
8ΜS SHORT-CIRCUIT TOLERANCE, 650V 75A, FRD BUILT-IN, FIELD STOP TRENCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGSX5TS65EGC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 114 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 79 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 404 W |
| Reverse Recovery Time (trr) | 116 ns |
| Supplier Device Package | TO-247N |
| Switching Energy | 1.9 mJ, 3.44 mJ |
| Td (on/off) @ 25°C [custom] | 113 ns |
| Td (on/off) @ 25°C [custom] | 43 ns |
| Test Condition | 10 Ohm, 400 V, 75 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.15 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGSX5TS65E Series
RGSX5TS65E is a 8μs SCSOA guaranteed IGBT, suitable for general inverter, UPS, Welder and power conditioner.
Documents
Technical documentation and resources