MCQ05P10Y-TP

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P-CHANNEL MOSFET, SOP-8

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Discrete Semiconductor Products

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P-CHANNEL MOSFET, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ05P10Y-TP

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1051 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	3.1 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max) [Max]
Micro Commercial Components MCQ05N06-TP	1.7 W	500 pF	2 N-Channel	Surface Mount	5 A	60 V	3 V	8-SOP	12 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	45 mOhm
Micro Commercial Components MCQ05P10Y-TP		1051 pF		Surface Mount	4.5 A	100 V	2.5 V	8-SOP		-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)		P-Channel	20 V	20 nC	3.1 W
Micro Commercial Components MCQ05N06-TP	1.7 W	500 pF	2 N-Channel (Dual)	Surface Mount	5 A	60 V	3 V	8-SOP	12 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	45 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 4.5A (Tc) 3.1W Surface Mount 8-SOP

Technical documentation and resources

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