Specification	RJK0855DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0855DPB Series

Nch Power MOSFET 80V 30A 11mohm LFPAK56

Part	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Technology	Mounting Type
Renesas Electronics Corporation RJK0855DPB-00#J5	20 V	60 W	2550 pF	11 mOhm	150 °C	30 A	SC-100 SOT-669	35 nC	10 V	LFPAK	80 V	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2500	$ 1.11
Mouser	N/A	1	$ 1.12
		2500	$ 1.11
		10000	$ 1.10
Newark	Each (Supplied on Cut Tape)	1	$ 1.51

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources