Discrete Semiconductor Products

MCU80N03-TP

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MOSFET N-CH 30V 80A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 80A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU80N03-TP

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCU80N03A-TP	MOSFET (Metal Oxide)	Surface Mount	30 V	DPAK	45 W	5.5 mOhm	4.5 V 10 V	-55 °C	175 ░C	N-Channel	20 V	2150 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	52.8 nC	2.5 V
Micro Commercial Components MCU80N03-TP	MOSFET (Metal Oxide)	Surface Mount	30 V	DPAK	70 W		4.5 V 10 V	-55 °C	175 ░C	N-Channel	20 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	28 nC	2.5 V	1600 pF	4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 70W (Tc) Surface Mount DPAK

Technical documentation and resources