Discrete Semiconductor Products

V20200C-E3/4W

Active

DIODE ARR SCHOT 200V 10A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE ARR SCHOT 200V 10A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	V20200C-E3/4W

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	150 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Technology	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Current - Reverse Leakage @ Vr	Diode Configuration	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division V20200G-E3/4W	Schottky	10 A	TO-220-3	150 µA	1 Pair Common Cathode	TO-220-3	200 V	200 mA 500 ns	150 °C	-40 °C	Through Hole	1.7 V
Vishay General Semiconductor - Diodes Division V20200C-E3/4W	Schottky	10 A	TO-220-3	150 µA	1 Pair Common Cathode	TO-220-3	200 V	200 mA 500 ns	150 °C	-40 °C	Through Hole	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 10A Through Hole TO-220-3

Technical documentation and resources