Discrete Semiconductor Products

AO6602L

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MOSFET N/P-CH 30V 6TSOP

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Discrete Semiconductor Products

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MOSFET N/P-CH 30V 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	AO6602L

Configuration	N and P-Channel Complementary
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-457, SC-74
Power - Max [Max]	1.15 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]
Alpha & Omega Semiconductor Inc. AO6604	150 °C	-55 °C	1 V	Surface Mount	SC-74 SOT-457	20 V	MOSFET (Metal Oxide)	1.1 W	2.5 A 3.4 A	N and P-Channel Complementary	65 mOhm	3.8 nC	6-TSOP	320 pF	4.5 V	Logic Level Gate
Alpha & Omega Semiconductor Inc. AO6602L	150 °C	-55 °C	3 V	Surface Mount	SC-74 SOT-457	30 V	MOSFET (Metal Oxide)	1.15 W		N and P-Channel Complementary	75 mOhm	8.5 nC	6-TSOP			Logic Level Gate	240 pF

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