Discrete Semiconductor Products

NTHS5445T1

Obsolete

MOSFET P-CH 8V 5.2A CHIPFET

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 5.2A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	NTHS5445T1

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTHS5445T1	8 V	1.8 V 4.5 V	26 nC	P-Channel	35 mOhm	MOSFET (Metal Oxide)	1.3 W	Surface Mount	ChipFET™	8 V	450 mV	-55 °C	150 °C	5.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 5.2A (Ta) 1.3W (Ta) Surface Mount ChipFET™

Technical documentation and resources