Discrete Semiconductor Products

PBHV8050SA_R1_00001

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SILICON NPN TRIPLE DIFFUSE HIGH

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Discrete Semiconductor Products

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SILICON NPN TRIPLE DIFFUSE HIGH

Technical Specifications

Parameters and characteristics for this part

Specification	PBHV8050SA_R1_00001

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	500 mW
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	500 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type
Panjit International Inc. PBHV8050SA_R1_00001	-55 °C	150 °C	SOT-23	500 mV	500 V	50 MHz	150	Surface Mount	150 mA	500 mW	SC-59 SOT-23-3 TO-236-3	100 nA	NPN

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General part information

Bipolar (BJT) Transistor NPN 500 V 150 mA 50MHz 500 mW Surface Mount SOT-23

Technical documentation and resources

No documents available