Discrete Semiconductor Products

PHM21NQ15T,518

Obsolete

MOSFET N-CH 150V 22.2A 8HVSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 22.2A 8HVSON

Technical Specifications

Parameters and characteristics for this part

Specification	PHM21NQ15T,518

Current - Continuous Drain (Id) (Tc)	22.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	36.2 nC
Input Capacitance (Ciss) (Max)	2080 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Length	5 mm
Package Name	8-HVSON
Package Width	6 mm
Power Dissipation (Max)	62.5 W
Rds On (Max)	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Package Length	Package Width	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Gate Charge (Max)
NXP USA Inc. PHM21NQ15T,518	55 mOhm	22.2 A	Surface Mount	8-HVSON	5 mm	6 mm	MOSFET (Metal Oxide)	2080 pF	20 V	150 V	62.5 W	10 V	5 V	8-VDFN Exposed Pad	4 V	-55 °C	150 °C	N-Channel	36.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 150 V 22.2A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)

Technical documentation and resources