Optoelectronics

TSHG5510

Obsolete

EMITTER IR 830NM 100MA RADIAL

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Optoelectronics

Obsolete

EMITTER IR 830NM 100MA RADIAL

Technical Specifications

Parameters and characteristics for this part

Specification	TSHG5510

Current - DC Forward (If) (Max) [Max]	100 mA
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	Radial
Radiant Intensity (Ie) Min @ If [Min]	18 mW/sr
Type	Infrared (IR)
Viewing Angle	76 °
Voltage - Forward (Vf) (Typ)	1.45 V
Wavelength	830 nm

Part	Current - DC Forward (If) (Max) [Max]	Radiant Intensity (Ie) Min @ If [Min]	Wavelength	Package / Case	Voltage - Forward (Vf) (Typ)	Type	Operating Temperature [Max]	Operating Temperature [Min]	Orientation	Viewing Angle	Mounting Type
Vishay General Semiconductor - Diodes Division TSHG5510	100 mA	18 mW/sr	830 nm	Radial	1.45 V	Infrared (IR)	85 °C	-40 °C	Top View	76 °	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Infrared (IR) Emitter 830nm 1.45V 100mA 18mW/sr @ 100mA 76° Radial

Technical documentation and resources

No documents available