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Discrete Semiconductor Products

BYG23MHE3_A/H

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1.5A DO214AC

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DocumentsDatasheet
Discrete Semiconductor Products

BYG23MHE3_A/H

Active
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1.5A DO214AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBYG23MHE3_A/H
Current - Average Rectified (Io)1.5 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214AC, SMA
QualificationAEC-Q101
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AC (SMA)
TechnologyAvalanche
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.50
10$ 0.39
100$ 0.23
500$ 0.22
Digi-Reel® 1$ 0.50
10$ 0.39
100$ 0.23
500$ 0.22
Tape & Reel (TR) 1800$ 0.15
3600$ 0.14
5400$ 0.13
9000$ 0.12
45000$ 0.12
90000$ 0.11

Description

General part information

BYG23 Series

Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources