Discrete Semiconductor Products

S10J-TP

Obsolete

DIODE GEN PURP 600V 10A DO214AB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 10A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S10J-TP

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (HSMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Supplier Device Package	Technology	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Package / Case	Current - Reverse Leakage @ Vr
Micro Commercial Components S10JL-TP	DO-214AB (SMC)	Standard	Surface Mount	10 A	1.2 V	150 °C	-55 °C	600 V	Standard Recovery >500ns	200 mA	DO-214AB SMC	10 µA
Micro Commercial Components S10J-TP	DO-214AB (HSMC)	Standard	Surface Mount	10 A	1.2 V	150 °C	-55 °C	600 V	Standard Recovery >500ns	200 mA	DO-214AB SMC	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 10A Surface Mount DO-214AB (HSMC)

Technical documentation and resources