Discrete Semiconductor Products

MCAC95N06Y-TP

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MOSFET N-CH 60 95A DFN5060

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Discrete Semiconductor Products

Active

MOSFET N-CH 60 95A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC95N06Y-TP

Current - Continuous Drain (Id) @ 25°C	95 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	120 W
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Micro Commercial Components MCAC95N06Y-TP	MOSFET (Metal Oxide)	4.5 V 10 V	60 V	Surface Mount	8-PowerTDFN	N-Channel	20 V	95 A	5950 pF	2.2 V	120 W	DFN5060	93 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 95A (Tc) 120W (Tj) Surface Mount DFN5060

Technical documentation and resources