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Technical Specifications
Parameters and characteristics for this part
| Specification | QSZ2TR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 270 |
| Frequency - Transition | 300 MHz, 280 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Power - Max [Max] | 1.25 W |
| Supplier Device Package | TSMT5 |
| Transistor Type | 1 PNP, 1 NPN |
| Vce Saturation (Max) @ Ib, Ic | 370 mV, 350 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2031 | $ 0.82 | |
Description
General part information
QSZ2 Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Documents
Technical documentation and resources