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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK7Y28-75B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK7Y28-75B,115

Active
Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Y28-75B,115
Current - Continuous Drain (Id) @ 25°C35.5 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1417 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)85 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.99
10$ 0.81
100$ 0.63
500$ 0.53
Digi-Reel® 1$ 0.99
10$ 0.81
100$ 0.63
500$ 0.53
N/A 1380$ 1.71
Tape & Reel (TR) 1500$ 0.45
3000$ 0.41
4500$ 0.40
7500$ 0.38

Description

General part information

BUK7Y28 Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.