Discrete Semiconductor Products

SI7452DP-T1-GE3

Obsolete

MOSFET N-CH 60V 11.5A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 11.5A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7452DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs [Max]	8.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology
Vishay General Semiconductor - Diodes Division SI7452DP-T1-GE3	10 V	60 V	PowerPAK® SO-8	PowerPAK® SO-8	-55 °C	150 °C	Surface Mount	8.3 mOhm	1.9 W	N-Channel	4.5 V	160 nC	11.5 A	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 11.5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available