Discrete Semiconductor Products

PSMN012-100YLX

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MOSFET N-CH 100V 85A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 85A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN012-100YLX

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	7973 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Rds On (Max) @ Id, Vgs	11.9 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PSMN012-80PS,127	N-Channel	80 V	TO-220-3	Through Hole	20 V	43 nC	148 W	74 A	10 V	2782 pF	TO-220AB	11 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN012-80BS,118	N-Channel	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	43 nC	148 W	74 A	10 V	2782 pF	D2PAK	11 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN012-60YS,115	N-Channel	60 V	SC-100 SOT-669	Surface Mount	20 V	28.4 nC		59 A	10 V	1685 pF	LFPAK56 Power-SO8		MOSFET (Metal Oxide)	-55 °C	175 ░C	11.1 mOhm
Freescale Semiconductor - NXP PSMN012-100YLX	N-Channel	100 V	SC-100 SOT-669	Surface Mount	20 V			85 A		7973 pF	LFPAK56 Power-SO8		MOSFET (Metal Oxide)	-55 °C	175 ░C	11.9 mOhm	118 nC	10 V	5 V	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 85A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources