Discrete Semiconductor Products

SI2310B-TP

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MOSFET N-CH 60V 3A SOT23

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Discrete Semiconductor Products

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MOSFET N-CH 60V 3A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2310B-TP

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	247 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1.3 V

Part	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Grade	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Technology	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Micro Commercial Components SI2310AHE3-TP	N-Channel	20 V	10.27 nC	SOT-23	60 V	2 V	SC-59 SOT-23-3 TO-236-3	Automotive	409 pF	Surface Mount	100 mOhm	AEC-Q101	MOSFET (Metal Oxide)	1.2 W	-55 °C	150 °C	4.5 V 10 V	3 A
Micro Commercial Components SI2310B-TP	N-Channel	16 V		SOT-23	60 V	1.3 V	SC-59 SOT-23-3 TO-236-3		247 pF	Surface Mount	105 mOhm		MOSFET (Metal Oxide)	1.2 W	-55 °C	150 °C	4.5 V 10 V	3 A	6 nC

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General part information

N-Channel 60 V 3A (Tj) 1.2W Surface Mount SOT-23

Technical documentation and resources