Discrete Semiconductor Products

VI30100S-E3/4W

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DIODE SCHOTTKY 100V 30A TO262AA

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 100V 30A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VI30100S-E3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	200 mA, 500 ns
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	910 mV

Part	Technology	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Current - Average Rectified (Io) (per Diode)
Vishay General Semiconductor - Diodes Division VI30100S-M3/4W	Schottky	Through Hole	200 mA 500 ns	100 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA	30 A	1 mA	910 mV	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VI30100S-E3/4W	Schottky	Through Hole	200 mA 500 ns	100 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA	30 A	1 mA	910 mV	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VI30100SG-E3/4W	Schottky	Through Hole	200 mA 500 ns	100 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA	30 A	350 µA	1 V	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VI30100CHM3/4W	Schottky	Through Hole	200 mA 500 ns	100 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA		500 µA	800 mV	150 °C	-40 °C	1 Pair Common Cathode	15 A

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General part information

Diode 100 V 30A Through Hole TO-262AA

Technical documentation and resources